650V 49mΩ AEC-Q101 Qualified GaN FET in TO-247

The TPH3205WSBQA 650V, 49m? Gallium Nitride (GaN) FET is a normally-off automotive (AEC-Q101) qualified device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.\r\n\r\n Transphorm GaN offers improved effi ? JEDEC and AEC-Q101 qualified GaN technology\r\n? Dynamic RDS(on)eff production tested\r\n? Robust design, defined by\r\n— Intrinsic lifetime tests\r\n— Wide gate safety margin\r\n— Transient over-voltage capability\r\n? Very low QRR\r\n? Reduced crossover loss\r\n? RoHS compliant and Halogen-free ;

Transphorm

AEC-Q101 Qualified 650V GaN FET in TO-247

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TRANSPHORM

Crystal Unit SMD 1.6x1.2 24.576MHz

Features: Surface Mount Hermetic Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Ultra Miniature Package Description and Applications: Surface mount 1.6mmx1.2mm crystal unit for use in wireless communications devices, especially for a n

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TAI-SAW

嘉碩科技

5A, 22V Bidirectional Load Switch with Fast Role Swap

Description The UCS3205 is 5A, 22V load switch with Fast Role Swap (FRS) capability, bidirectional current capability, configurable overcurrent limiting, auto-recovery Fault handling, overvoltage lockout, back-voltage protection, slew rate control, quick output discharge and a scaled analog

文件：2.51431 Mbytes 頁(yè)數(shù)：30 Pages

MICROCHIP

微芯科技

HEXFET POWER MOSFET

文件：196.37 Kbytes 頁(yè)數(shù)：5 Pages

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