絲?。?a target="_blank" title="Marking" href="/8514/marking.html">8514；Package：PS-8；Bipolar Transistors Silicon NPN Epitaxial Type

Applications ? High-Speed Switching ? DC-DC Converters Features (1) High DC current gain: hFE = 120 to 240 (VCE = 2 V, IC = 0.3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.15 V (max) (IC = 1.0 A, IB = 0.1 A) (3) High-speed switching: tf = 170 ns (typ.) (IC = 1.0 A)

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TOSHIBA

東芝

Power transistor for high-speed switching applications

Application Scope High-speed switching / DC/DC converters \n

Toshiba

東芝

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8514VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. FEATURES ? Package type: chip ? Package form: single chip ? Technology: surface emitter ? Dimensions chip (L x W x H

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VISHAYVishay Siliconix

威世威世科技公司

Specification of High Power IR Emitting Diode Chip

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VISHAYVishay Siliconix

威世威世科技公司

Specification of High Power IR Emitting Diode Chip

DESCRIPTION TS8514VB is a high power infrared, 855 nm surface emitting diode in GaAlAs technology with high radiant power and high speed. Polarity configuration is “n-up”. GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and ass

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VISHAYVishay Siliconix

威世威世科技公司