Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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Power MOSFET (N-ch dual)

Application Scope：Mobile equipments / Motor drivers\nPolarity：N-ch×2\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 馬來西亞 Drain current (Q1) ID 4.2 A \nDrain current (Q2) ID 4.2 A \nPower Dissipation PD 1.48 W \nDrain-Source voltage (Q1) VDSS 30 V \nDrain-Source voltage (Q2) VDSS 30 V \nGate-Source voltage (Q1) VGSS +/-20 V \nGate-Source voltage (Q2) VGSS +/-20 V ;

Toshiba

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications ? Small footprint due to small and thin package ? Low drain-source ON resistance: RDS (ON) = 13 m? (typ.) ? High forward transfer admittance: |Yfs| = 15 S (typ.) ? Low leakage current: IDSS = 10 μA (max

文件：304 Kbytes 頁數(shù)：7 Pages

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Lithium Ion Battery Applications Field Effect Transistor Silicon N Channel MOS Type

文件：200.13 Kbytes 頁數(shù)：7 Pages

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Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications

文件：188.51 Kbytes 頁數(shù)：7 Pages

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