Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

Notebook PC Applications Portable Equipment Applications ? Low drain-source ON resistance: RDS (ON) = 38 m? (typ.) ? High forward transfer admittance: |Yfs| = 5.4 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) ? Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA)

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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Dual N-Channel 20 V (D-S) MOSFET

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VBSEMI

微碧半導(dǎo)體

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

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Power MOSFET (N-ch dual)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch×2\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available Drain current (Q1) ID 3 A \nDrain current (Q2) ID 3 A \nPower Dissipation PD 1.35 W \nDrain-Source voltage (Q1) VDSS 20 V \nDrain-Source voltage (Q2) VDSS 20 V ;

Toshiba

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

文件：232.71 Kbytes 頁(yè)數(shù)：7 Pages

TOSHIBA

東芝