Field Effect Transistor Silicon P-Channel MOS Type (U-MOS??

Notebook PC Applications Portable Equipment Applications ? Small footprint due to a small and thin package ? Low drain-source ON-resistance: RDS (ON) = 9.4 mΩ (typ.) (VGS = ?10 V) ? Low leakage current: IDSS = -10 μA (max) (VDS = -30 V) ? Enhancement mode: V

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TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

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Noteboook PC Applications Portable Eqipment Applications

文件：225.87 Kbytes 頁數(shù)：7 Pages

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Power MOSFET (P-ch single)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅤ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：馬來西亞 Drain current ID -18 A \nPower Dissipation PD 27 W \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

東芝

Noteboook PC Applications Portable Eqipment Applications

文件：225.87 Kbytes 頁數(shù)：7 Pages

TOSHIBA

東芝