TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H)

High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications ? Small footprint due to a small and thin package ? High-speed switching ? Small gate charge: QSW = 5.0 nC (typ.) ? Low drain-source ON-resistance: RDS (ON) = 7.3 mΩ (typ.) ? High forward t

文件：148.21 Kbytes 頁數(shù)：7 Pages

TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

N-Channel 30 V (D-S) MOSFET

文件：1.11191 Mbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導體

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：N-ch\nGeneration：U-MOSⅤ-H\nRoHS Compatible Product(s) (#)：Available Drain current ID 24 A \nPower Dissipation PD 30 W \nDrain-Source voltage VDSS 30 V ;

Toshiba

東芝