Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV)

Lithium-Ion Battery Applications Portable Equipment Applications Notebook PC Applications ? Small footprint due to a small and thin package ? Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) ? High forward transfer admittance: |Yfs| = 42 S (typ.) ? Low leakage current: IDSS = 10 μA (

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TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

Power MOSFET (N-ch single VDSS 30V)

Application Scope：Notebook PCs\nPolarity：N-ch\nGeneration：U-MOSⅣ\nRoHS Compatible Product(s) (#)：Available Drain current ID 18 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS 30 V ;

Toshiba

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??

Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications ? Small footprint due to a small and thin package ? Low drain-source ON-resistance: RDS (ON) = 2.6 m? (typ.) ? High forward transfer admittance: |Yfs| =94 S (typ.) ? Low leakage current: IDSS = 10 μA (m

文件：160.08 Kbytes 頁數(shù)：7 Pages

TOSHIBA

東芝

N-Channel 30 V (D-S) MOSFET

文件：1.11176 Mbytes 頁數(shù)：7 Pages

VBSEMI

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