絲?。?a target="_blank" title="Marking" href="/h2b/marking.html">H2B；Package：VS-7；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

Transistor Silicon NPN Epitaxial Type

文件：187.71 Kbytes 頁數(shù)：5 Pages

TOSHIBA

東芝

Power transistor for high-speed switching applications

Polarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：馬來西亞 Collector Current IC 3 A \nCollector Current ICP 5 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1.6 W \nCollector-emitter voltage VCEO 50 V ;

Toshiba

東芝

SERIES TPQ QUAD TRANSISTOR ARRAYS

文件：320.84 Kbytes 頁數(shù)：5 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

Description The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. In contras

文件：114.26 Kbytes 頁數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

TSM6502CR

文件：462.48 Kbytes 頁數(shù)：9 Pages

TSC

臺灣半導(dǎo)體