P-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：669.85 Kbytes 頁(yè)數(shù)：5 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：669.85 Kbytes 頁(yè)數(shù)：5 Pages

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

文件：669.85 Kbytes 頁(yè)數(shù)：5 Pages

SUTEX

HC49US 40MHz Crystal Unit

Features: Surface Mount Seam Weld Package Good Frequency Perturbation and Stability over temperature Description and Applications: HC49US crystal unit for use in wireless telecommunications devices

文件：319.88 Kbytes 頁(yè)數(shù)：5 Pages

TAI-SAW

嘉碩科技