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    首頁 >TP0606>規(guī)格書列表

    型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

    TP0606

    P-Channel Enhancement-Mode Vertical DMOS FETs

    General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

    文件:454.5 Kbytes 頁數(shù):4 Pages

    SUTEX

    TP0606

    P-Channel Enhancement-Mode Vertical DMOS FET

    General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

    文件:669.85 Kbytes 頁數(shù):5 Pages

    SUTEX

    TP0606

    P-Channel Enhancement-Mode Vertical DMOS FET

    General Description\nThis low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input imp ? Low threshold (-2.4V max.)\n? High input impedance\n? Low input capacitance (80pF typ.)\n? Fast switching speeds\n? Low on-resistance\n? Free from secondary breakdown\n? Low input and output leakageApplications\n? Logic level interfaces – ideal for TTL and CMOS\n? Solid state relays\n? Battery ope;

    Microchip

    微芯科技

    TP0606N3

    P-Channel Enhancement-Mode Vertical DMOS FETs

    General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

    文件:454.5 Kbytes 頁數(shù):4 Pages

    SUTEX

    TP0606N3-G

    P-Channel Enhancement-Mode Vertical DMOS FET

    General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

    文件:669.85 Kbytes 頁數(shù):5 Pages

    SUTEX

    詳細(xì)參數(shù)

    • 型號(hào):

      TP0606

    • 功能描述:

      MOSFET 60V 3.5Ohm

    • RoHS:

    • 制造商:

      STMicroelectronics

    • 晶體管極性:

      N-Channel

    • 汲極/源極擊穿電壓:

      650 V

    • 閘/源擊穿電壓:

      25 V

    • 漏極連續(xù)電流:

      130 A 電阻汲極/源極

    • RDS(導(dǎo)通):

      0.014 Ohms

    • 配置:

      Single

    • 安裝風(fēng)格:

      Through Hole

    • 封裝/箱體:

      Max247

    • 封裝:

      Tube

    供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
    2023+
    3000
    進(jìn)口原裝現(xiàn)貨
    詢價(jià)
    24+
    三極管
    2500
    自己現(xiàn)貨
    詢價(jià)
    SUPERTEX
    24+
    TO-92
    5000
    只做原裝公司現(xiàn)貨
    詢價(jià)
    SILICONI
    專業(yè)鐵帽
    CAN3
    500
    原裝鐵帽專營,代理渠道量大可訂貨
    詢價(jià)
    SILICONI/矽??萍?/div>
    專業(yè)鐵帽
    CAN3
    67500
    鐵帽原裝主營-可開原型號(hào)增稅票
    詢價(jià)
    SUPERTEXINC
    25+
    TO-92
    30000
    代理全新原裝現(xiàn)貨,價(jià)格優(yōu)勢
    詢價(jià)
    Microchip
    1940+
    N/A
    1251
    加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
    詢價(jià)
    MICROCHIP(美國微芯)
    2447
    TO-92-3
    31500
    2000個(gè)/圓盤一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
    詢價(jià)
    MICROCHIP
    25+
    TO-92-3
    3675
    就找我吧!--邀您體驗(yàn)愉快問購元件!
    詢價(jià)
    MICROCHIP(美國微芯)
    2021+
    TO-92-3
    499
    詢價(jià)
    更多TP0606供應(yīng)商 更新時(shí)間2026-1-22 15:21:00

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