P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu

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SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology\nThese low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the h ? Low threshold — -2.4V max.\n? High input impedance\n? Low input capacitance — 95pF typical\n? Fast switching speeds\n? Low on resistance\n? Free from secondary breakdown\n? Low input and output leakage\n? Complementary N- and P-channel devicesApplications\n? Logic level interfaces – ideal for TTL ;

Microchip

微芯科技

Crystal Unit SMD 3.2x2.5 20.000MHz

Features: Surface Mount Hermetic Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Ultra Miniature Package Description and Applications: Surface mount 3.2mmx2.5mm crystal unit for use in wireless communications devices, especially for a n

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TAI-SAW

嘉碩科技

L16PLT10CGRN

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E-SWITCH