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          首頁(yè) >TP0604N3>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          TP0604N3

          P-Channel Enhancement-Mode Vertical DMOS FETs

          General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu

          文件:480.47 Kbytes 頁(yè)數(shù):4 Pages

          SUTEX

          TP0604N3-G

          P-Channel Enhancement-Mode Vertical DMOS FET

          General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu

          文件:697.33 Kbytes 頁(yè)數(shù):5 Pages

          SUTEX

          TP0604N3-GP002

          P-Channel Enhancement-Mode Vertical DMOS FET

          General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu

          文件:697.33 Kbytes 頁(yè)數(shù):5 Pages

          SUTEX

          TP0604N3-GP003

          P-Channel Enhancement-Mode Vertical DMOS FET

          General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu

          文件:697.33 Kbytes 頁(yè)數(shù):5 Pages

          SUTEX

          TP0604N3-GP005

          P-Channel Enhancement-Mode Vertical DMOS FET

          General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu

          文件:697.33 Kbytes 頁(yè)數(shù):5 Pages

          SUTEX

          TP0604N3-GP013

          P-Channel Enhancement-Mode Vertical DMOS FET

          General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu

          文件:697.33 Kbytes 頁(yè)數(shù):5 Pages

          SUTEX

          TP0604N3-GP014

          P-Channel Enhancement-Mode Vertical DMOS FET

          General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu

          文件:697.33 Kbytes 頁(yè)數(shù):5 Pages

          SUTEX

          TP0604N3G

          P-Channel Enhancement-Mode Vertical DMOS FET

          文件:311.77 Kbytes 頁(yè)數(shù):14 Pages

          MICROCHIP

          微芯科技

          TP0604N3-G

          P-Channel Enhancement-Mode Vertical DMOS FET

          General Description\nThis? low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input im ?Lowthreshold (-2.4V max.)\n?High input impedance\n?Low input capacitance (95pF typical)\n?Fast switching speeds\n?Low on-resistance\n?Free from secondary breakdown\n?Low input and output leakageApplications\n?Logic level interfaces - ideal for TTL and CMOS\n?Solid state relays\n?Battery operated sy;

          Microchip

          微芯科技

          詳細(xì)參數(shù)

          • 型號(hào):

            TP0604N3

          • 功能描述:

            MOSFET 40V 2Ohm

          • RoHS:

          • 制造商:

            STMicroelectronics

          • 晶體管極性:

            N-Channel

          • 汲極/源極擊穿電壓:

            650 V

          • 閘/源擊穿電壓:

            25 V

          • 漏極連續(xù)電流:

            130 A 電阻汲極/源極

          • RDS(導(dǎo)通):

            0.014 Ohms

          • 配置:

            Single

          • 安裝風(fēng)格:

            Through Hole

          • 封裝/箱體:

            Max247

          • 封裝:

            Tube

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          TP0604N3
          25+
          133
          133
          詢價(jià)
          SI
          NA
          8553
          一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
          詢價(jià)
          SUPERTE
          23+
          TO92
          8650
          受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
          詢價(jià)
          Microchip
          1940+
          N/A
          940
          加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物
          詢價(jià)
          MICROCHIP(美國(guó)微芯)
          2447
          TO-92-3
          31500
          1000個(gè)/袋一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)
          詢價(jià)
          MICROCHIP
          25+
          TO-92-3
          3675
          就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
          詢價(jià)
          SUPERTEX
          23+
          TO-92
          50000
          全新原裝正品現(xiàn)貨,支持訂貨
          詢價(jià)
          Microchip
          22+
          NA
          940
          加我QQ或微信咨詢更多詳細(xì)信息,
          詢價(jià)
          Microchip
          22+
          TO2263 TO923 (TO226AA)
          9000
          原廠渠道,現(xiàn)貨配單
          詢價(jià)
          MICROCHIP/微芯
          22+
          TO-92-3
          12245
          現(xiàn)貨,原廠原裝假一罰十!
          詢價(jià)
          更多TP0604N3供應(yīng)商 更新時(shí)間2026-1-20 14:12:00
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