N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

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SUTEX

Crystal Unit SMD 3.2x2.5 26.0000MHz

Features: Surface Mount Hermetic Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Ultra Miniature Package Description and Applications: Surface mount 3.2mmx2.5mm crystal unit for use in wireless communications devices

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TAI-SAW

嘉碩科技

Switchmode Full Plastic Dual Ultrafast Power Rectifiers

…Designed for use in switching power supplies. inverters and as free wheeling diodes. These state-of-the-art devices have the following features: ＊ High Surge Capacity ＊ Low Power Loss, High efficiency ＊ Glass Passivated chip junctions ＊ 150℃ Operating Junction Temperature ＊ Low Stored Charge

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MOSPEC

統(tǒng)懋

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

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SUTEX