MicroAmpere High Frequency Response Bipolar Latching Magnetic Switch Sensor

Description TMR1202/TMR1208 is a bipolar latching magnetic switch integrated the tunnel magnetoresistance (TMR) magnetic sensor and CMOS circuitry, which is able to detect the change of magnetic field and output high and low voltage signals for high accuracy position detection. Unlike Hall/

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MicroAmpere High Frequency Response Bipolar Latching Magnetic Switch Sensor

Description TMR1202/TMR1208 is a bipolar latching magnetic switch integrated the tunnel magnetoresistance (TMR) magnetic sensor and CMOS circuitry, which is able to detect the change of magnetic field and output high and low voltage signals for high accuracy position detection. Unlike Hall/

文件：1.40579 Mbytes 頁數(shù)：10 Pages

MULTIDIMENSION

多維科技

MicroAmpere High Frequency Response Bipolar Latching Magnetic Switch Sensor

Description TMR1202/TMR1208 is a bipolar latching magnetic switch integrated the tunnel magnetoresistance (TMR) magnetic sensor and CMOS circuitry, which is able to detect the change of magnetic field and output high and low voltage signals for high accuracy position detection. Unlike Hall/

文件：1.40579 Mbytes 頁數(shù)：10 Pages

MULTIDIMENSION

多維科技

超低功耗高頻雙極鎖存型磁開關傳感器

TMR1202HT是一款集成了隧道磁阻(TMR)傳感器和CMOS技術，為高靈敏度、高速、低功耗、高精度應用而開發(fā)的雙極磁開關。TMR1202HT采用TMR磁傳感器和CMOS集成電路，包括電壓發(fā)生器、比較器、施密特觸發(fā)器和CMOS輸出電路，能將變化的磁場信號轉化為數(shù)字電壓信號輸出。TMR1202HT通過內部電壓穩(wěn)壓器來提供溫度補償電源，并允許寬的工作電壓范圍。TMR1202HT以低電壓工作、1微安級的供電電流、高響應頻率、寬的工作溫度范圍、優(yōu)越的抗外磁干擾特性成為眾多低功耗、高性能應用的理想選擇。TMR1202HT采用兩種封裝形式：SOT23-3封裝形式和TO-92S，所對應的產品型號分別為TM （1）隧道磁電阻(TMR)技術\n（2）1.5微安超低功耗\n（3）5kHz高頻率響應\n（4）雙極鎖存型開關\n（5）高靈敏度，低開關點\n（6）寬工作電壓范圍\n（7）卓越的溫度穩(wěn)定性\n（8）優(yōu)越的抗外磁場性能;

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