絲印：tMR；Package：SOT-143R；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

文件：159.22 Kbytes 頁(yè)數(shù)：16 Pages

PHI

PHI

絲?。?strong>tMR；Package：SOT-143R；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range,

文件：306.4 Kbytes 頁(yè)數(shù)：13 Pages

恩XP

絲?。?strong>tMR；Package：SOT-143R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

絲印：tMR；Package：SOT-143R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

絲?。?strong>tMR；Package：SOT-143R；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range,

文件：306.4 Kbytes 頁(yè)數(shù)：13 Pages

恩XP

絲?。?strong>tMR；Package：SOT-143R；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

文件：148.94 Kbytes 頁(yè)數(shù)：16 Pages

PHI

PHI

絲?。?strong>tMR；Package：SOT-143R；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

文件：159.22 Kbytes 頁(yè)數(shù)：16 Pages

PHI

PHI

Low Resistance Value Resistor - Molded 2 and 4 Leads

Features: ? Metal element resistors ? Tinned copper leads ? Low temperature coefficient ? Molded bodies ? TMR – Kelvin Bridge Test ? MRS high stability version ? Cut and formed product is available on selected sizes - contact Stackpole for details ? 100 RoHS compliant and lead free without

文件：281.38 Kbytes 頁(yè)數(shù)：5 Pages

SEI

世達(dá)柏

DC/DC Converter TMR 2 Series, 2 Watt

? Wide 2:1 input voltage range ? Compact SIP-8 package ? Small footprint ? Remote On/Off control ? Temperature range –40° to +85°C ? High efficiency ? Excellent load and line regulation ? Indefinite short-circuit protection ? I/O isolation 1600 VDC ? 3-year product warrenty

文件：958.42 Kbytes 頁(yè)數(shù)：4 Pages

TRACOPOWER

DC/DC Converter TMR 2 Series, 2 Watt

? Wide 2:1 input voltage range ? Compact SIP-8 package ? Small footprint ? Remote On/Off control ? Temperature range –40° to +85°C ? High efficiency ? Excellent load and line regulation ? Indefinite short-circuit protection ? I/O isolation 1600 VDC ? 3-year product warrenty

文件：958.42 Kbytes 頁(yè)數(shù)：4 Pages

TRACOPOWER