| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
TMCS1133 | TMCS1133 Precision 1 MHz Hall-Effect Current Sensor With ±1100V Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features ? High continuous current capability: 75 ARMS ? Robust reinforced isolation – Withstand isolation voltage: 5000 VRMS – Reinforced working voltage: 1100 VDC ? High accuracy – Sensitivity error: ± 0.3 – Sensitivity drift: ± 20 ppm/°C – Offset error: ± 1 mV – Offset drift: ± 20 μV 文件:2.25784 Mbytes 頁數:36 Pages | TI 德州儀器 | TI | |
TMCS1133 | TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features ? High continuous current capability: 80ARMS ? Robust reinforced isolation ? High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri 文件:2.756 Mbytes 頁數:40 Pages | TI 德州儀器 | TI | |
TMCS1133 | TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features ? High continuous current capability: 80ARMS ? Robust reinforced isolation ? High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri 文件:2.72932 Mbytes 頁數:41 Pages | TI 德州儀器 | TI | |
TMCS1133 | TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features ? High continuous current capability: 80ARMS ? Robust reinforced isolation ? High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri 文件:2.72987 Mbytes 頁數:41 Pages | TI 德州儀器 | TI | |
TMCS1133 | TMCS1133-Q1 AEC-Q100, Precision 1MHz Hall-Effect Current Sensor With Reinforced Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features ? AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to 125°C, TA ? Functional Safety-Capable – Documentation available to aid functional safety system design ? High continuous current capability: 80ARMS ? Robust reinforced isolation ? High accuracy – S 文件:3.27692 Mbytes 頁數:44 Pages | TI 德州儀器 | TI | |
TMCS1133 | 具有 AFR、ALERT 的 ±1100V 增強型隔離 75Arms 1MHz 霍爾效應電流傳感器 TMCS1133 是一款電隔離霍爾效應電流傳感器,具有業(yè)界出色的隔離功能和精度。該器件還提供與輸入電流成正比的輸出電壓,且在所有靈敏度選項下均具有出色的線性度和低漂移。具有內置漂移補償功能的精密信號調節(jié)電路能夠在沒有系統(tǒng)級校準的情況下,在溫度和壽命范圍內的最大總誤差小于 2.5%,或在一次性室溫校準(同時包括壽命和溫度漂移)的情況下的最大總誤差小于 1.5%。\n\n交流或直流輸入電流流經內部導體,所產生的磁場可由集成式片上霍爾效應傳感器進行測量。無磁芯結構消除了對磁集中器的需求。差分霍爾傳感器可抑制外部雜散磁場產生的干擾。低導體電阻將可測量電流范圍提高至 ±96A,同時更大程 高持續(xù)電流能力:75 A RMS\n \n可靠的增強型隔離 \n \n可承受的隔離電壓:5000V RMS\n \n增強型工作電壓:1100V DC\n \n\n \n高精度 \n \n靈敏度誤差: ±0.3%\n \n靈敏度漂移: ±20ppm/°C\n \n失調電壓誤差: ±1mV\n \n溫漂 ±20μV/°C\n \n非線性: ±0.1%\n \n\n \n在產品使用壽命期間具有低漂移:±0.5%(最大值)\n \n對外部磁場具有高抗擾度\n \n電源抑制比低:60dB\n \n信號帶寬: 1MHz\n \n低傳播延遲: 80ns\n \n快速過流檢測響應:50; | TI 德州儀器 | TI | |
TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features ? High continuous current capability: 80ARMS ? Robust reinforced isolation ? High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri 文件:2.756 Mbytes 頁數:40 Pages | TI 德州儀器 | TI | ||
TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features ? High continuous current capability: 80ARMS ? Robust reinforced isolation ? High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri 文件:2.72932 Mbytes 頁數:41 Pages | TI 德州儀器 | TI | ||
TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features ? High continuous current capability: 80ARMS ? Robust reinforced isolation ? High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri 文件:2.72987 Mbytes 頁數:41 Pages | TI 德州儀器 | TI | ||
TMCS1133 Precision 1MHz Hall-Effect Current Sensor With Reinforced Isolation Working Voltage, Overcurrent Detection and Ambient Field Rejection 1 Features ? High continuous current capability: 80ARMS ? Robust reinforced isolation ? High accuracy – Sensitivity error: ±0.1% – Sensitivity thermal drift: ±20ppm/°C – Sensitivity lifetime drift: ±0.2% – Offset error: ±0.2mV – Offset thermal drift: ±10μV/°C – Offset lifetime dri 文件:2.72932 Mbytes 頁數:41 Pages | TI 德州儀器 | TI |
技術參數
- Input offset current (±) (max) (mA):
130
- Input offset current drift (±) (typ) (μA/°C):
867
- Features:
Alert Function
- Supply voltage (max) (V):
5.5
- Supply voltage (min) (V):
3
- Small-signal bandwidth (Hz):
1000000
- Sensitivity error (%):
0.75
- Sensitivity error drift (±) (max) (ppm/°C):
50
- Rating:
Catalog
- Operating temperature range (°C):
-40 to 125
- Creepage (min) (mm):
8.1
- Clearance (min) (mm):
8.1
- Isolation rating:
Reinforced
- Surge isolation voltage (VIOSM) (VPK):
10000
- 封裝:
SOIC (DVG)
- 引腳:
10
- 尺寸:
106.09 mm2 10.3 x 10.3
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