Power Schottky Barrier Diode, TO-220IS(1), 150V, 30A

? Average Output Rectified Current : IO=30A\n? Repetitive Peak Reverse Voltage : VRRM=150V\n? Low Forward Voltage\n? Low Reverse Current.;

KEC

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：130.63 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A

Ultra Low VF = 0.56 V at IF = 5 A ? FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum,

文件：168.52 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：163.6 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司