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                >絲印反查>TM582FSEP
                
    
            
    
                
    
                    
    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO
    
                    
    TMUX582FPWTSEP
    絲?。?strong>TM582FSEP；Package：TSSOP；TMUX582F-SEP Radiation-Tolerant 60V Protected, Latch-Up Immune 8:1 Multiplexer with Adjustable Fault Threshold
    
1 Features
? VID V62/23607-01XE
? Radiation hardened
– Single event latch-up (SEL) immune to 43 MeVcm2/
mg at 125°C
– ELDRS free to 30krad(Si)
– Total ionizing dose (TID) RLAT for every wafer
lot up to 30krad(Si)
– TID characterized up to 30krad(Si)
– Single event transient (SET) characte
    文件：1.29195 Mbytes 頁數：30 Pages
    TI
    德州儀器
    

    TMUX582FPWTSEP
    絲印：TM582FSEP；Package：TSSOP；TMUX582F-SEP Radiation-Tolerant 60V Protected, Latch-Up Immune 8:1 Multiplexer with Adjustable Fault Threshold
    
1 Features
? VID V62/23607-01XE
? Radiation hardened
– Single event latch-up (SEL) immune to 43 MeVcm2/
mg at 125°C
– ELDRS free to 30krad(Si)
– Total ionizing dose (TID) RLAT for every wafer
lot up to 30krad(Si)
– TID characterized up to 30krad(Si)
– Single event transient (SET) characte
    文件：1.30058 Mbytes 頁數：33 Pages
    TI
    德州儀器
    

    V62/23607-01XE
    絲印：TM582FSEP；Package：TSSOP；TMUX582F-SEP Radiation-Tolerant 60V Protected, Latch-Up Immune 8:1 Multiplexer with Adjustable Fault Threshold
    
1 Features
? VID V62/23607-01XE
? Radiation hardened
– Single event latch-up (SEL) immune to 43 MeVcm2/
mg at 125°C
– ELDRS free to 30krad(Si)
– Total ionizing dose (TID) RLAT for every wafer
lot up to 30krad(Si)
– TID characterized up to 30krad(Si)
– Single event transient (SET) characte
    文件：1.30058 Mbytes 頁數：33 Pages
    TI
    德州儀器
    

    V62SLASH23607-01XE
    絲?。?strong>TM582FSEP；Package：TSSOP；TMUX582F-SEP Radiation-Tolerant 60V Protected, Latch-Up Immune 8:1 Multiplexer with Adjustable Fault Threshold
    
1 Features
? VID V62/23607-01XE
? Radiation hardened
– Single event latch-up (SEL) immune to 43 MeVcm2/
mg at 125°C
– ELDRS free to 30krad(Si)
– Total ionizing dose (TID) RLAT for every wafer
lot up to 30krad(Si)
– TID characterized up to 30krad(Si)
– Single event transient (SET) characte
    文件：1.30058 Mbytes 頁數：33 Pages
    TI
    德州儀器
    

    
            
    
		
    
            
    供應商型號品牌批號封裝庫存備注價格
    
                
    



    TI/德州儀器
    		

    25+
    		

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    25+
    		

    原廠封裝
    		

    10280
    		

    		
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    20-TSSOP
    		

    20948
    		

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    TI
    		

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    正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
    		
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    TI德州儀器
    		

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    原裝正品現貨,實單可談,量大價優(yōu)
    		
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