isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.4 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 200 V (D-S) MOSFET

文件：2.34596 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

Switching Voltage Regulators

文件：267.93 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

Power MOSFET (N-ch 150V VDSS 250V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中國 / 馬來西亞 Drain current ID 8.5 A \nPower Dissipation PD 30 W \nDrain-Source voltage VDSS 200 V \nGate-Source voltage VGSS +/-20 V ;

Toshiba

東芝