Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數：73 Pages

TOSHIBA

東芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON)= 0.8 ?(typ.) ? High forward transfer admittance: ?Yfs?= 4.0 S (typ.) ? Low leakage current: IDSS= 10 μA (max) (VDS= 600 V) ? Enhancement-mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

文件：266.13 Kbytes 頁數：6 Pages

TOSHIBA

東芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.68 Kbytes 頁數：2 Pages

ISC

無錫固電

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中國 / 馬來西亞 Drain current ID 7.5 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

東芝