Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

東芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 0.9 Ω(typ.) ? High forward transfer admittance: |Yfs| = 3.0 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) ? Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：297.43 Kbytes 頁(yè)數(shù)：6 Pages

TOSHIBA

東芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.04Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：馬來西亞 Drain current ID 7.5 A \nPower Dissipation PD 40 W \nDrain-Source voltage VDSS 550 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

東芝