絲?。?a target="_blank" title="Marking" href="/k7a90e/marking.html">K7A90E；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)

文件：231.5 Kbytes 頁數(shù)：9 Pages

TOSHIBA

東芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7A@ TC=25℃ ·Drain Source Voltage -VDSS= 900V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.55 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFET (N-ch 700V VDSS)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：π-MOSⅧ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中國 Drain current ID 7 A \nPower Dissipation PD 45 W \nDrain-Source voltage VDSS 900 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

東芝

TPS7A90 500-mA, High-Accuracy, Low-Noise LDO Voltage Regulator

1 Features 1? 1.0% accuracy over line, load, and temperature ? Low output noise: 4.7 μVRMS (10 Hz–100 kHz) ? Low dropout: 100 mV (max) at 0.5 A ? Wide input voltage range: 1.4 V to 6.5 V ? Wide output voltage range: 0.8 V to 5.7 V ? High power-supply rejection ratio (PSRR): – 60 dB at D

文件：2.69767 Mbytes 頁數(shù)：34 Pages

TI

德州儀器

TPS7A90 500-mA, High-Accuracy, Low-Noise LDO Voltage Regulator

文件：3.16712 Mbytes 頁數(shù)：34 Pages

TI

德州儀器

500-mA, High-Accuracy, Low-Noise LDO Voltage Regulator

文件：2.12596 Mbytes 頁數(shù)：33 Pages

TI

德州儀器