Switching Regulator Applications

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) ? High forward transfer admittance: ?Yfs? = 2.5 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) ? Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

文件：182.17 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.22Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：279.9 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel MOSFET uses advanced trench technology

文件：979.67 Kbytes 頁數(shù)：4 Pages

DOINGTER

杜因特

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

iscN-Channel MOSFET Transistor

文件：319.54 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFET (N-ch 250V VDSS 500V)

Polarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中國 / 馬來西亞 Drain current ID 7 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS 500 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

東芝

Power MOSFET (N-ch 250V VDSS 500V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：π-MOSⅦ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：馬來西亞 Drain current ID 7 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS 500 V ;

Toshiba

東芝