N-Channel 60 V (D-S) MOSFET

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VBSEMI

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Power MOSFET (N-ch single 30V VDSS 60V)

Polarity：N-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available Drain current ID 30 A \nPower Dissipation PD 30 W \nDrain-Source voltage VDSS 60 V ;

Toshiba

東芝

Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications ● Low drain-source ON-resistance: RDS (ON) = 19 m? (typ.) ● High forward transfer admittance: |Yfs| = 34 S (typ.) ● Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) ● Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

N-Channel 60 V (D-S) MOSFET

文件：2.14023 Mbytes 頁數(shù)：8 Pages

VBSEMI

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Power MOSFET (N-ch single 30V VDSS 60V)

Polarity：N-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：馬來西亞\n Drain current ID 30 A \nPower Dissipation PD 25 W \nDrain-Source voltage VDSS 60 V \n;

Toshiba

東芝