絲?。?strong>TK25V60X；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.11 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA)

文件：232.93 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/tk25v60x5/marking.html">TK25V60X5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 120 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.125 Ω(typ.) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V(VDS = 10 V, ID = 1.2 mA)

文件：364.38 Kbytes 頁數(shù)：10 Pages

TOSHIBA

東芝

Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅣ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中國 Drain current ID 25 A \nPower Dissipation PD 180 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

東芝

General Rectifying Diode

FEATURES · Low VF · Pb Free Terminal · SMD APPLICATIONS · PFC · AC/DC Section of SMPS · Choppers Motor Drives

文件：320.71 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

GENERAL PURPOSE RECTIFIERS

文件：181.98 Kbytes 頁數(shù)：5 Pages

SHINDENGEN