Type TK Low TC Precision Radial-Lead Film Resistors

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CADDOCK

絲?。?a target="_blank" title="Marking" href="/k200a65z5/marking.html">K200A65Z5；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 95 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.154 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.61

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東芝

絲?。?a target="_blank" title="Marking" href="/k200e65z5/marking.html">K200E65Z5；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 95 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.154 Ω (typ.) (3) High-speed switching properties with lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.61 mA)

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東芝

Silicon N-channel MOS (U-MOS-H)

1. Applications ? Automotive ? Switching Voltage Regulators ? DC-DC Converters ? Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.78 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) (4) Enhancement mode: Vth

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東芝

絲?。?a target="_blank" title="Marking" href="/k200u65z5/marking.html">K200U65Z5；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 95 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.154 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.61

文件：509.58 Kbytes 頁(yè)數(shù)：9 Pages

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東芝

絲?。?a target="_blank" title="Marking" href="/tk200v60z1/marking.html">TK200V60Z1；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.166 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.48 mA)

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東芝

絲?。?a target="_blank" title="Marking" href="/tk200v65z5/marking.html">TK200V65Z5；Package：DFN8x8；MOSFETs Silicon N-Channel MOS

Applications ? Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 95 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.154 Ω (typ.) (3) High-speed switching properties with lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 0.61 mA)

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Power MOSFET (N-ch 500V

Application Scope：Switching Voltage Regulators\n\nPolarity：N-ch\n\nGeneration：DTMOSⅥ\n\nInternal Connection：Single\n\nRoHS Compatible Product(s) (#)：Please contact us.

Toshiba

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Power MOSFET (N-ch 500V

Application Scope：Switching Voltage Regulators\n\nPolarity：N-ch\n\nGeneration：DTMOSⅥ\n\nInternal Connection：Single\n\nRoHS Compatible Product(s) (#)：Available

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Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：High efficiency DC/DC converters / Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 200 A \nPower Dissipation PD 375 W \nDrain-Source voltage VDSS 40 V \nGate-Source voltage VGSS +/-20 V ;

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