Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications ? Low drain-source ON resistance: RDS (ON) = 0.32 ? (typ.) ? High forward transfer admittance: ?Yfs? = 8.0 S (typ.) ? Low leakage current: IDSS = 100 μA (max) (VDS = 650 V) ? Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

文件：210.8 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

東芝

iscN-Channel MOSFET Transistor

? DESCRITION ? Switching Voltage Regulators ? FEATURES ? Low drain-source on-resistance: RDS(ON) = 0.32? (typ.) ? Low leakage current: IDSS = 100μ A (max) (VDS = 650 V) ? Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robu

文件：288.69 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel 650V (D-S) Power MOSFET

文件：1.07054 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Power MOSFET (N-ch 500V VDSS 700V)

Polarity：N-ch\nGeneration：DTMOSⅡ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中國 / 馬來西亞 Drain current ID 13 A \nPower Dissipation PD 40 W \nDrain-Source voltage VDSS 650 V \nGate-Source voltage VGSS +/-30 V ;

Toshiba

東芝