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          首頁 >TK12>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          TK125E60Z1

          絲?。?a target="_blank" title="Marking" href="/k125e60z1/marking.html">K125E60Z1;Package:TO-220;MOSFETs Silicon N-Channel MOS

          Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)

          文件:527.47 Kbytes 頁數(shù):9 Pages

          TOSHIBA

          東芝

          TK125N60Z1

          絲?。?a target="_blank" title="Marking" href="/k125n60z1/marking.html">K125N60Z1;Package:TO-247;MOSFETs Silicon N-Channel MOS

          Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)

          文件:526.23 Kbytes 頁數(shù):9 Pages

          TOSHIBA

          東芝

          TK125U60Z1

          絲?。?a target="_blank" title="Marking" href="/k125u60z1/marking.html">K125U60Z1;Package:TOLL;MOSFETs Silicon N-Channel MOS

          Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)

          文件:535.52 Kbytes 頁數(shù):9 Pages

          TOSHIBA

          東芝

          TK125Z60Z1

          絲印:K125Z60Z1;Package:TO-247-4L;MOSFETs Silicon N-Channel MOS

          Applications ? Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA)

          文件:549.29 Kbytes 頁數(shù):10 Pages

          TOSHIBA

          東芝

          TK12A10K3

          Bipolar Small-Signal Transistors

          MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

          文件:1.58274 Mbytes 頁數(shù):73 Pages

          TOSHIBA

          東芝

          TK12A45D

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=450V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.52Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:319.21 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          TK12A45D

          Switching Regulator Applications

          Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 0.43 Ω (typ.) ? High forward transfer admittance: ?Yfs? = 5.5 S (typ.) ? Low leakage current: IDSS = 10 μA (max) (VDS = 450 V) ? Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

          文件:208.34 Kbytes 頁數(shù):6 Pages

          TOSHIBA

          東芝

          TK12A45D

          Bipolar Small-Signal Transistors

          MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

          文件:1.58274 Mbytes 頁數(shù):73 Pages

          TOSHIBA

          東芝

          TK12A50D

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.52Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

          文件:319 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          TK12A50D

          Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

          Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) ? High forward transfer admittance: |Yfs| = 6.0 S (typ.) ? Low leakage current: IDSS = 10 μA (VDS = 500 V) ? Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

          文件:319.18 Kbytes 頁數(shù):6 Pages

          TOSHIBA

          東芝

          技術(shù)參數(shù)

          • 結(jié)構(gòu):

            P/I/N

          • 電壓:

            N/A

          • 型式:

            Standard

          • 波長(zhǎng):

            940

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          TOKO
          24+
          SOT-153/SOT-23-5
          23700
          新進(jìn)庫存/原裝
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          11+
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          8000
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          23+
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          5000
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          17+
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          6200
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          6000
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          24+
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          5000
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          1716+
          ?
          6500
          只做原裝進(jìn)口,假一罰十
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          24+
          NA
          3000
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          更多TK12供應(yīng)商 更新時(shí)間2026-1-19 15:30:00
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