Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors ? High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) ? Industrial Use ? Complement to TIP145/146/147

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FAIRCHILD

仙童半導(dǎo)體

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general?purpose amplifier and low frequency switching applications. Features ? High DC Current Gain ? Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V ? Collector?Emitter Sustaining Voltage ? @ 30 mA

文件：217.86 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

SILICON PLANAR DARLINGTON POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Frequency Switching Applications TO- 3PN Non Isolated Plastic Package

文件：327.1 Kbytes 頁數(shù)：3 Pages

CDIL

POWER TRANSISTORS(10A,60-100V,125W)

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MOSPEC

統(tǒng)懋

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. ? High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V ? Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

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MOTOROLA

摩托羅拉

Darlington Transistors

Features ? Designed for general-purpose amplifier and low speed switching applications ? Collector-Emitter sustaining voltage VCEO (sus) = 60V (Minimum) - TIP145 = 80V (Minimum) - TIP141, TIP146 = 100V (Minimum) - TIP142, TIP147 ? Collector-Emitter saturation voltage VCE (sat) = 2V (Maximum

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MULTICOMP

易絡(luò)盟

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS They are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in TO-3PN plastic packtage. They are intended for use in power linear and switching application. The complementary are TIP145, TIP146, TIP14

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COMSET

SILICON POWER DARLINGTON COMPLEMENTARY TRANSISTORS

TIP140 TIP141 TIP142 --> NPN TIP145 TIP146 TIP147 --> PNP DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP140, TIP145 series types are Complementary Silicon Power Darlington Transistors manufactured by the epitaxial base process, designed for general purpose amplifier and low speed switching

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CENTRAL

POWER DARLINGTONS

DESCRIPTION The TIP140, TIP141, TIP142 are silicon epitaxial base NPN transistors in monolithic Darlington configuration and are mounted in SOT-93 plastic package. They are i ntended for use in power linear and switching applications. The complementary PNP types are the T1P145, TIP146, TIP147 res

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

NPN SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP145, TIP146 and TIP147 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A

文件：139.77 Kbytes 頁數(shù)：6 Pages

POINN