| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
TIP141T | Monolithic Construction With Built In Base- Emitter Shunt Resistors Features ? Monolithic Construction With Built In Base-Emitter Shunt Resistors ? High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) ? Industrial Use ? Complement to TIP145T/146T/147T 文件:52.75 Kbytes 頁數(shù):4 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
TIP141T | POWER TRANSISTORS(10A,60-100V,80W) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP 文件:204.61 Kbytes 頁數(shù):4 Pages | MOSPEC 統(tǒng)懋 | MOSPEC | |
TIP141T | NPN Epitaxial Silicon Darlington Transistor Features ? Monolithic Construction With Built In Base-Emitter Shunt Resistors ? High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) ? Industrial Use ? Complement to TIP145T/146T/147T 文件:69.96 Kbytes 頁數(shù):2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
TIP141T | Silicon NPN Darlington Power Transistor Features ? Monolithic Construction With Built In Base-Emitter Shunt Resistors ? High DC Current Gain : hFE = 1000 @ VCE = 4V, lc = 5A (Min.) ? Industrial Use ? Complement to TIP145T/146T/147T 文件:79.49 Kbytes 頁數(shù):2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
TIP141T | Monolithic Construction With Built In Base-Emitter Shunt Resistors Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP145/146/147 文件:571.15 Kbytes 頁數(shù):5 Pages | SEMIHOW | SEMIHOW | |
TIP141T | Monolithic Construction With Built In Base-Emitter Shunt Resistors 文件:574.33 Kbytes 頁數(shù):5 Pages | TAI-SAW 嘉碩科技 | TAI-SAW | |
TIP141T | isc Silicon NPN Darlington Power Transistor 文件:253.42 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
NPN Epitaxial Silicon Darlington Transistor 文件:314.92 Kbytes 頁數(shù):5 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | ||
TIP141T | BJT 雙極性三極管 | SPTECH 質(zhì)超微 | SPTECH | |
TIP141T | BJT | SemiHow | SemiHow |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-N+Darl+Di
- 性質(zhì):
低頻或音頻放大 (LF)_開關(guān)管 (S)_功率放大 (L
- 封裝形式:
直插封裝
- 極限工作電壓:
80V
- 最大電流允許值:
10A
- 最大工作頻率:
<1MHZ或未知
- 引腳數(shù):
3
- 可代換的型號:
BDT63A,BDT63B,BDT63C,BDW93B,BDW93C,BDX33B...E,
- 最大耗散功率:
125W
- 放大倍數(shù):
β>1000
- 圖片代號:
B-71
- vtest:
80
- htest:
999900
- atest:
10
- wtest:
125
產(chǎn)品屬性
- 產(chǎn)品編號:
TIP141T
- 制造商:
onsemi
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個
- 包裝:
管件
- 晶體管類型:
NPN - 達林頓
- 不同?Ib、Ic 時?Vce 飽和壓降(最大值):
3V @ 40mA,10A
- 電流 - 集電極截止(最大值):
2mA
- 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):
1000 @ 5A,4V
- 工作溫度:
150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3
- 供應(yīng)商器件封裝:
TO-220-3
- 描述:
TRANS NPN DARL 80V 10A TO220-3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
TO-220-3 |
21000 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
FAIRCHILD |
05+ |
原廠原裝 |
4852 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
ST/FSC |
17+ |
TO-220 |
6200 |
詢價 | |||
ST |
11+ |
TO-220 |
8000 |
全新原裝,絕對正品現(xiàn)貨供應(yīng) |
詢價 | ||
ST |
24+ |
TO-220 |
1000 |
原裝現(xiàn)貨熱賣 |
詢價 | ||
ST/意法 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST |
22+ |
TO-220 |
6000 |
十年配單,只做原裝 |
詢價 | ||
ON Semiconductor |
2022+ |
TO-220-3 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
原廠 |
2023+ |
模塊 |
600 |
專營模塊,繼電器,公司原裝現(xiàn)貨 |
詢價 | ||
ADI |
23+ |
TO-220 |
8000 |
只做原裝現(xiàn)貨 |
詢價 |
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