| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
TIP112 | Monolithic Construction With Built In Base- Emitter Shunt Resistors Monolithic Construction With Built In Base-Emitter Shunt Resistors ? Complementary to TIP115/116/117 ? High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) ? Low Collector-Emitter Saturation Voltage ? Industrial Use 文件:49.25 Kbytes 頁數(shù):4 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | |
TIP112 | Plastic Medium-Power Complementary Silicon Transistors Plastic Medium-Power Complementary Silicon Transistors Designed for general?purpose amplifier and low?speed switching applications. Features ? High DC Current Gain ? hFE = 2500 (Typ) @ IC = 1.0 Adc ? Collector?Emitter Sustaining Voltage ? @ 30 mAdc VCEO(sus) = 60 Vdc (Min) 文件:269.51 Kbytes 頁數(shù):6 Pages | ONSEMI 安森美半導體 | ONSEMI | |
TIP112 | PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
文件:153.15 Kbytes 頁數(shù):3 Pages | BOCA 博卡 | BOCA | |
TIP112 | DARLINGTON TRANSISTOR (NPN) TO-220-3L Plastic-Encapsulate Transistors FEATURES ● High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) ● Low Collector-Emitter Saturation Voltage ● Industrial Use 文件:286.69 Kbytes 頁數(shù):2 Pages | JIANGSU 長電科技 | JIANGSU | |
TIP112 | PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS
文件:99.23 Kbytes 頁數(shù):2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體公司 | NJSEMI | |
TIP112 | NPN SILICON POWER DARLINGTONS NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP115, TIP116 and TIP117 ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 500 at 4 V, 2 A 文件:101.68 Kbytes 頁數(shù):6 Pages | POINN | POINN | |
TIP112 | Silicon NPN Darlington Power Transistors DESCRIPTION ? With TO-220C package ? DARLINGTON ? High DC current gain ? Low collector saturation voltage ? Complement to type TIP115/116/117 APPLICATIONS ? For industrial use 文件:122.78 Kbytes 頁數(shù):4 Pages | SAVANTIC | SAVANTIC | |
TIP112 | Silicon NPN transistor in a TO-220 Plastic Package. Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Complement to TIP117. Applications Medium power linear switching applications. 文件:1.25135 Mbytes 頁數(shù):6 Pages | FOSHAN 藍箭電子 | FOSHAN | |
TIP112 | DARLINGTON TRANSISTOR (NPN) FEATURES ● High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) ● Low Collector-Emitter Saturation Voltage ● Industrial Use 文件:149.42 Kbytes 頁數(shù):2 Pages | FS | FS | |
TIP112 | PLASTIC POWER TRANSISTORS PLASTIC POWER TRANSISTORS Intended for use in Medium Power Linear and Switching Applications TO-220 Plastic Package 文件:72.48 Kbytes 頁數(shù):2 Pages | TEL | TEL |
晶體管資料
- 型號:
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-N+Darl+Di
- 性質(zhì):
低頻或音頻放大 (LF)_開關管 (S)_功率放大 (L
- 封裝形式:
直插封裝
- 極限工作電壓:
100V
- 最大電流允許值:
4A
- 最大工作頻率:
<1MHZ或未知
- 引腳數(shù):
3
- 可代換的型號:
BD265B,BD701,BDW23C,BDW53C,BDW63C,
- 最大耗散功率:
50W
- 放大倍數(shù):
β>1000
- 圖片代號:
B-10
- vtest:
100
- htest:
999900
- atest:
4
- wtest:
50
產(chǎn)品屬性
- 產(chǎn)品編號:
TIP112
- 制造商:
onsemi
- 類別:
分立半導體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個
- 包裝:
管件
- 晶體管類型:
NPN - 達林頓
- 不同?Ib、Ic 時?Vce 飽和壓降(最大值):
2.5V @ 8mA,2A
- 電流 - 集電極截止(最大值):
2mA
- 不同?Ic、Vce?時 DC 電流增益 (hFE)(最小值):
1000 @ 1A,4V
- 工作溫度:
150°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3
- 供應商器件封裝:
TO-220-3
- 描述:
TRANS NPN DARL 100V 2A TO220-3
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST(意法半導體) |
24+ |
TO-220 |
942 |
原廠訂貨渠道,支持BOM配單一站式服務 |
詢價 | ||
ST/意法 |
24+ |
TO-220 |
2000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
ST/意法 |
21+19+ |
TO-220 |
8279 |
只做原裝正品 |
詢價 | ||
ST/意法 |
25+ |
TO-220 |
45000 |
ST/意法全新現(xiàn)貨TIP112即刻詢購立享優(yōu)惠#長期有排單訂 |
詢價 | ||
SMG |
06+ |
原廠原裝 |
13451 |
只做全新原裝真實現(xiàn)貨供應 |
詢價 | ||
STM |
24+/25+ |
TO-220AB |
400 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||
24+ |
TO-220 |
10000 |
全新 |
詢價 | |||
ST/進口原 |
17+ |
TO-220 |
6200 |
詢價 | |||
ON |
11+ |
TO-220 |
8000 |
全新原裝,絕對正品現(xiàn)貨供應 |
詢價 | ||
ST |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價 |
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