MICROWAVE POWER GaAs FET

FEATURES ?BROAD BAND INTERNALLY MATCHED FET ?HIGH POWER P1dB= 39.0dBm at 12.7GHz to 13.2GHz ?HIGH GAIN G1dB= 8.0dB at 12.7GHz to 13.2GHz ?LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 27.0dBm Single Carrier Level ?HERMETICALLY SEALED PACKAGE

文件：473.32 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

12.75-13.25 GHz 8-Watt Internally Matched Power FET

FEATURES ? 12.75– 13.25 GHz Bandwidth ? Input/Output Impedance Matched to 50 Ohms ? +39 dBm Output Power at 1dB Compression ? 6.5 dB Power Gain at 1dB Compression ? 28 Power Added Efficiency ? Hermetic Metal Flange Package ? 100 Tested for DC, RF, and RTH

文件：185.12 Kbytes 頁數(shù)：2 Pages

EXCELICS

X, Ku-Band Internally Matched FET

DESCRIPTION The FLM1213-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance FEATURES ? High Output Power:

文件：298.51 Kbytes 頁數(shù)：4 Pages

EUDYNA

THERMOCOUPLE INPUT LIMIT ALARM

文件：94.41 Kbytes 頁數(shù)：4 Pages

MSYSTEM

愛模