MICROWAVE POWER GaAs FET

FEATURES ?BROAD BAND INTERNALLY MATCHED FET ?HIGH POWER P1dB= 36.5dBm at 10.7GHz to 11.7GHz ?HIGH GAIN G1dB= 9.5dB at 10.7GHz to 11.7GHz ?LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 24.0dBm Single Carrier Level ?HERMETICALLY SEALED PACKAGE

文件：281.16 Kbytes 頁數(shù)：2 Pages

TOSHIBA

東芝

10.7-11.7GHz, 4W Internally Matched Power FET

10.7-11.7GHz, 4W Internally Matched Power FET ? 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM ? EIA FEATURES HIGH PAE( 30 TYPICAL) ? EIB FEATURES HIGH IP3(49dBm TYPICAL) ? +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB ? 9/8dB TYPICAL G1dB POWER GAIN FOR EIA/EIB ?

文件：46.9 Kbytes 頁數(shù)：1 Pages

EXCELICS

10.7-11.7GHz, 4W Internally Matched Power FET

10.7-11.7GHz, 4W Internally Matched Power FET ? 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM ? EIA FEATURES HIGH PAE( 30 TYPICAL) ? EIB FEATURES HIGH IP3(49dBm TYPICAL) ? +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB ? 9/8dB TYPICAL G1dB POWER GAIN FOR EIA/EIB ?

文件：46.9 Kbytes 頁數(shù)：1 Pages

EXCELICS

10.70-11.70GHz 4-Watt Internally-Matched Power FET

FEATURES ? 10.70 –11.70GHz Bandwidth ? Input/Output Impedance Matched to 50 Ohms ? +36.0 dBm Output Power at 1dB Compression ? 6.5 dB Power Gain at 1dB Compression ? 30 Power Added Efficiency ? -46 dBc IM3 at Po = 25.5 dBm SCL ? 100 Tested for DC, RF, and RTH

文件：162.37 Kbytes 頁數(shù)：4 Pages

EXCELICS