高壓 IGBT 模塊

額定電壓：3300V\n額定電流：1000A\n芯片代次：4th ● AlSiC基板\n● ALN襯板\n● 高熱循環(huán)能力\n● 10μs 短路承受能力;

CTSC

中國(guó)中車(chē)

SCALE-2 Plug-and-Play Drivers

Features ? Plug-and-play solution ? Allows parallel connection of IGBT modules ? For 2-level, 3-level and multilevel topologies ? Built-in isolated DC/DC power supply (master) ? Fiber-optic links (master) ? Built-in interface to 1SP0635D2S1(C) (slave) ? Duty cycle 0...100 ? Dynamic Advance

文件：188.47 Kbytes 頁(yè)數(shù)：9 Pages

POWERINTPower Integrations, Inc.

荷蘭帕沃英蒂格盛有限公司

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. ? High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc ? Collector–Emitter Sustaining Voltage — @ 30 mAdc

文件：218.99 Kbytes 頁(yè)數(shù)：6 Pages

MOTOROLA

摩托羅拉

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP

文件：200.04 Kbytes 頁(yè)數(shù)：4 Pages

MOSPEC

統(tǒng)懋

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium?Power Complementary Silicon Transistors Designed for general?purpose amplifier and low?speed switching applications. Features ?High DC Current Gain ?hFE = 2500 (Typ) @ IC= 4.0 Adc ?Collector?Emitter Sustaining Voltage ? @ 30 mAdc VCEO(sus)= 60 Vdc (Min) ?

文件：218.99 Kbytes 頁(yè)數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體