SILICON CONTROLLED RECTIFIERS

SILICON CONTROLLED RECTIFIERS ● 2 A Continuous On-State Current ● 15 A Surge-Current ● Glass Passivated Wafer ● 400 V to 600 V Off-State Voltage ● Max IGT of 200 μA ● Package Options

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POINN

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium?Power Complementary Silicon Transistors Designed for general?purpose amplifier and low?speed switching applications. Features ?High DC Current Gain ?hFE = 2500 (Typ) @ IC= 4.0 Adc ?Collector?Emitter Sustaining Voltage ? @ 30 mAdc VCEO(sus)= 60 Vdc (Min) ?

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ONSEMI

安森美半導(dǎo)體

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. ? High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc ? Collector–Emitter Sustaining Voltage — @ 30 mAdc

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MOTOROLA

摩托羅拉

PNP SILICON POWER DARLINGTONS

● Designed for Complementary Use with TIP100, TIP101 and TIP102 ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Maximum VCE(sat) of 2.5 V at IC = 8 A

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