55 Watt Discrete Power GaN on SiC HEMT

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TRIQUINT

DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT

Qorvo's TGF2956 is a discrete 10.08 mm GaN on SiC HEMT which operates from DC-12 GHz.\nThe TGF2956 typically provides 47.6 dBm of saturated output power with power gain of 19.3 dB at 3 GHz. The maximum power added efficiency is 69.7 % which makes the TGF2956 appropriate for high efficiency appli ? Frequency range: DC - 12 GHz\n? 47.6dBm nominal Psat at 3 GHz\n? 69.7% maximum PAE at 3 GHz\n? 19.3dB nominal power gain at 3 GHz\n? Bias: Vd = 32V, Idq = 200mA\n? Chip dimensions: 0.82 x 2.88 x 0.10 mm\n;

Qorvo

威訊聯(lián)合

55 Watt Discrete Power GaN on SiC HEMT

文件：1.38938 Mbytes 頁數(shù)：19 Pages

TRIQUINT

Switch Mode Lithium-Ion Battery Charger Controller

文件：424.81 Kbytes 頁數(shù)：10 Pages

TI

德州儀器