7 Watt Discrete Power GaN on SiC HEMT

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DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT

Qorvo's TGF2952 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-14 GHz. \nThe TGF2952 typically provides 38.4 dBm of saturated output power with power gain of 20.4 dB at 3 GHz. The maximum power added efficiency is 75.7 % which makes the TGF2952 appropriate for high efficiency appli ? Frequency range: DC - 14 GHz\n? 38.4dBm nominal Psat at 3 GHz\n? 75.7% maximum PAE at 3 GHz\n? 20.4dB nominal power gain at 3GHz\n? Bias: Vd = 32V, Idq = 25mA\n? Technology: 0.25 um power GaN on SiC\n? Chip dimensions: 0.82 x 1.01 x 0.10 mm;

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7 Watt Discrete Power GaN on SiC HEMT

文件：1.76735 Mbytes 頁數(shù)：22 Pages

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1.5A DARLINGTON SWITCHES

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1.5A DARLINGTON SWITCHES

文件：3.41658 Mbytes 頁數(shù)：163 Pages

ETCList of Unclassifed Manufacturers

未分類制造商