180 um Discrete GaAs pHEMT

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TRIQUINT

DC - 20 GHz, 180 um Discrete GaAs pHEMT Die

Qorvo's TGF2018 is a discrete 180-Micron pHEMT which operates from DC to 20 GHz. The TGF2018 is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.\ ? Frequency Range: DC - 20 GHz\n? 22 dBm Typical Output Power - P1dB\n? 14 dB Typical Gain @ 12 GHz\n? 55% PAE Typical @ 12 GHz\n? 1.0 dB Typical NF @12 GHz\n? No Vias\n? Technology: 0.25 um GaAs pHEMT;

Qorvo

威訊聯(lián)合

180 um Discrete GaAs pHEMT

文件：245.3 Kbytes 頁(yè)數(shù)：8 Pages

TRIQUINT

16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply

文件：338.2 Kbytes 頁(yè)數(shù)：6 Pages

TOSHIBA

東芝

N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested ? Compliant to RoHS Directive 2002/95/EC APPLICATIONS ? DC/DC Converter

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VBSEMI

微碧半導(dǎo)體

Ultra High Precision Foil Wraparound Surface Mount Chip Resistor with TCR of ± 0.05 ppm/°C and Power Coefficient of 5 ppm at Rated Power and Load Life Stability of ± 0.005 (50 ppm)

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VISHAYVishay Siliconix

威世威世科技公司