絲?。?strong>TF9926；Package：SOP-8；Plastic-Encapsulate MOSFETS

Description The TF9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability ●

文件：3.66001 Mbytes 頁(yè)數(shù)：5 Pages

TUOFENG

拓鋒半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/tf9926a/marking.html">TF9926A；Package：SOP-8；Plastic-Encapsulate MOSFETS

Description The TF9926A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability

文件：3.57854 Mbytes 頁(yè)數(shù)：5 Pages

TUOFENG

拓鋒半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/tf9926b/marking.html">TF9926B；Package：SOP-8；Plastic-Encapsulate MOSFETS

Description The TF9926B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability

文件：3.51073 Mbytes 頁(yè)數(shù)：5 Pages

TUOFENG

拓鋒半導(dǎo)體

Dual N-Channel 20-V (D-S) MOSFET

文件：985.76 Kbytes 頁(yè)數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

Dual N-Channel 20-V (D-S) MOSFET

文件：985.77 Kbytes 頁(yè)數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

20V Dual N-Channel Enhancement Mode MOSFET

文件：131.88 Kbytes 頁(yè)數(shù)：3 Pages

TSC

臺(tái)灣半導(dǎo)體