Type TF Low TC Ultra-Precision Film Resistors

文件：180.68 Kbytes 頁數(shù)：1 Pages

CADDOCK

Low TC Ultra-Precision Film Resistors

文件：116.7 Kbytes 頁數(shù)：1 Pages

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絲?。?a target="_blank" title="Marking" href="/tf050n03m/marking.html">TF050N03M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF050N03M uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching

文件：3.41048 Mbytes 頁數(shù)：6 Pages

TUOFENG

拓鋒半導(dǎo)體

N -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF050N03MG uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switchi

文件：1.42933 Mbytes 頁數(shù)：6 Pages

TUOFENG

拓鋒半導(dǎo)體

絲印：TF050N04M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF050N04M combines advanced trench MOSFETtechnology with a low resistance package to provideextremely low RDS(ON) .This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimiz

文件：2.84964 Mbytes 頁數(shù)：5 Pages

TUOFENG

拓鋒半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/tf050n04n/marking.html">TF050N04N；Package：PDFNWB5x6-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF050N04N uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching

文件：4.31461 Mbytes 頁數(shù)：6 Pages

TUOFENG

拓鋒半導(dǎo)體

場效應(yīng)管(MOSFET)

TUOFENG

拓鋒半導(dǎo)體