SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIE R APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Voltage and High Current : VcEO=50V(Min.), Ic=150mA(Max.) . Low Noise : NF=0. 9dB(Typ. ) at f=lkHz . Complementary to TEC9015

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TOSHIBA

東芝

Advanced Power MOSFET

FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current : 10 μA (Max.) @ VDS = -60V ? Lower RDS(ON) : 0.362 ? (Typ.)

文件：228.74 Kbytes 頁數：7 Pages

FAIRCHILD

仙童半導體

NPN SILICON TRANSISTOR

FEATURES Power dissipation PCM : 0.4 W (Tamb=25°C) Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V

文件：27.43 Kbytes 頁數：1 Pages

WINGS

永盛電子

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors NPN silicon

文件：698.38 Kbytes 頁數：1 Pages

DAYA

大亞電器

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be

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DGNJDZ

南晶電子