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          首頁 >TE28F160C3>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          TE28F160C3

          3 Volt Intel Advanced Boot Block Flash Memory

          Device Description This section provides an overview of the Intel? Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit

          文件:177.81 Kbytes 頁數(shù):18 Pages

          INTEL

          英特爾

          TE28F160C3

          3 Volt Intel Advanced Boot Block Flash Memory

          Intel

          英特爾

          TE28F160C3B110

          3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:384.02 Kbytes 頁數(shù):59 Pages

          INTEL

          英特爾

          TE28F160C3B90

          3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:384.02 Kbytes 頁數(shù):59 Pages

          INTEL

          英特爾

          TE28F160C3BA110

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁數(shù):68 Pages

          INTEL

          英特爾

          TE28F160C3BA70

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁數(shù):68 Pages

          INTEL

          英特爾

          TE28F160C3BA90

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁數(shù):68 Pages

          INTEL

          英特爾

          TE28F160C3BC70

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁數(shù):68 Pages

          INTEL

          英特爾

          TE28F160C3BC80

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁數(shù):68 Pages

          INTEL

          英特爾

          TE28F160C3BC90

          Advanced Boot Block Flash Memory (C3)

          The 0.25 μm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 μ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

          文件:1.12721 Mbytes 頁數(shù):68 Pages

          INTEL

          英特爾

          技術(shù)參數(shù)

          • 存儲器格式:

            閃存

          • 技術(shù):

            FLASH - 引導(dǎo)塊

          • 存儲容量:

            16Mb (1M x 16)

          • 寫周期時(shí)間 - 字,頁:

            70ns

          • 訪問時(shí)間:

            70ns

          • 存儲器接口:

            并聯(lián)

          • 電壓 - 電源:

            2.7V ~ 3.6V

          • 工作溫度:

            -40°C ~ 85°C(TA)

          • 安裝類型:

            表面貼裝

          • 封裝/外殼:

            48-TFSOP(0.724\,18.40mm 寬)

          • 供應(yīng)商器件封裝:

            48-TSOP

          供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
          INT
          24+/25+
          22
          原裝正品現(xiàn)貨庫存價(jià)優(yōu)
          詢價(jià)
          INTEL
          09+
          TSOP
          5500
          原裝無鉛,優(yōu)勢熱賣
          詢價(jià)
          INTEL
          23+
          TSOP/48
          7000
          絕對全新原裝!100%保質(zhì)量特價(jià)!請放心訂購!
          詢價(jià)
          INTEL
          TSOP48
          252
          全新原裝進(jìn)口自己庫存優(yōu)勢
          詢價(jià)
          INTEL
          0510/0420
          TSOP
          3300
          全新原裝現(xiàn)貨絕對自己公司特價(jià)庫
          詢價(jià)
          INTEL
          17+
          TSOP
          6200
          100%原裝正品現(xiàn)貨
          詢價(jià)
          INTEL
          24+
          TSSOP
          3867
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          INTEL
          25+
          TSSOP
          18000
          原廠直接發(fā)貨進(jìn)口原裝
          詢價(jià)
          24+
          SMD48
          200
          真實(shí)現(xiàn)貨庫存
          詢價(jià)
          TE
          24+
          TSOP
          6232
          公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
          詢價(jià)
          更多TE28F160C3供應(yīng)商 更新時(shí)間2026-1-20 14:30:00
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