Repeat Cycle–ON Time First Relay Output

文件：184.44 Kbytes 頁(yè)數(shù)：1 Pages

ATC

絲印：TDG90BE；Package：GaNPX；Bottom-side cooled, 100V E-mode GaN transistor Product Specification

Features ?100 V enhancement mode GaN power switch?Bottom-side cooled configuration?RDS(on) = 7 mΩ?IDS(max) = 90 A?Ultra-low FOM Island Technology? die?Low inductance GaNPX? package?Easy gate drive requirements (0 V to 6 V)?Transient tolerant gate drive (-20 V / +10 V)?Very high switching frequenc

文件：3.00568 Mbytes 頁(yè)數(shù)：19 Pages

TELEDYNE

華特力科

絲印：TDG90BF；Package：GaNPX；Bottom-side cooled, 100V E-mode GaN transistor Product Specification

Features ?100 V enhancement mode GaN power switch?Bottom-side cooled configuration?RDS(on) = 7 mΩ?IDS(max) = 90 A?Ultra-low FOM Island Technology? die?Low inductance GaNPX? package?Easy gate drive requirements (0 V to 6 V)?Transient tolerant gate drive (-20 V / +10 V)?Very high switching frequenc

文件：3.00568 Mbytes 頁(yè)數(shù)：19 Pages

TELEDYNE

華特力科

7CH DARLINGTON SINK DRIVER

7CH DARLINGTON SINK DRIVER The TD62001P / AP / F / AF Series are high?voltage, high?current darlington drivers comprised of seven NPN darlington pairs. All units feature integral clamp diodes for switching inductive loads. Applications include relay, hammer, lamp and display (LED) drivers. F

文件：339.75 Kbytes 頁(yè)數(shù)：13 Pages

TOSHIBA

東芝

Bottom- or Top-side Cooled 650 V E-mode GaN FET

Features ? 650 V enhancement mode power switch with P-GaN gate structure ? Bottom- or Top-side cooled configuration ? RDS(on) = 25 m? (typ) ? IDS(max) = 60 A ? Ultra-low FOM Island Technology? die ? Ultra-low inductance GaNPX? package ? Easy gate drive requirements (0 V to 6 V) with 7V to

文件：2.72795 Mbytes 頁(yè)數(shù)：21 Pages

TELEDYNE

華特力科

絲印：61TSE；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features ? Class one / Level one Production Screening ? Lot Acceptance Test options available ? 650 V enhancement mode power transistor ? Top-cooled, low inductance GaNPX? package ? RDS(on) = 25 mΩ ? IDS(max) = 60 A ? Ultra-low FOM ? Simple gate drive requirements (0 V to 6 V) ? Transient

文件：1.41116 Mbytes 頁(yè)數(shù)：18 Pages

TELEDYNE

華特力科

絲印：61TSF；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features ? Class one / Level one Production Screening ? Lot Acceptance Test options available ? 650 V enhancement mode power transistor ? Top-cooled, low inductance GaNPX? package ? RDS(on) = 25 mΩ ? IDS(max) = 60 A ? Ultra-low FOM ? Simple gate drive requirements (0 V to 6 V) ? Transient

文件：1.41116 Mbytes 頁(yè)數(shù)：18 Pages

TELEDYNE

華特力科

絲?。?a target="_blank" title="Marking" href="/62tse/marking.html">62TSE；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features ? Class one / Level one Production Screening ? Lot Acceptance Test options available ? 650 V enhancement mode power transistor ? Top-cooled, low inductance GaNPX? package ? RDS(on) = 25 mΩ ? IDS(max) = 60 A ? Ultra-low FOM ? Simple gate drive requirements (0 V to 6 V) ? Transient

文件：1.65443 Mbytes 頁(yè)數(shù)：21 Pages

TELEDYNE

華特力科

絲?。?a target="_blank" title="Marking" href="/62tsf/marking.html">62TSF；Package：GaNPX；Space GaN E-mode Transistor Product Specficaton

Features ? Class one / Level one Production Screening ? Lot Acceptance Test options available ? 650 V enhancement mode power transistor ? Top-cooled, low inductance GaNPX? package ? RDS(on) = 25 mΩ ? IDS(max) = 60 A ? Ultra-low FOM ? Simple gate drive requirements (0 V to 6 V) ? Transient

文件：1.65443 Mbytes 頁(yè)數(shù)：21 Pages

TELEDYNE

華特力科

Single/Dual 4-Amp Isolated Gate Driver with High Transient dV/dt) Immunity

KEY FEATURES ? Single, dual, or high-side/low-side drivers ? Single PWM or dual digital inputs ? High dV/dt immunity: ? 200 kV/μs CMTI ? 400 kV/μs Latch-up ? Separate pull-up/down outputs for slew rate control ? Wide supply range: ? Input supply: 2.5–5.5 V ? Driver supply: 4.2–30 V ? Ve

文件：963.33 Kbytes 頁(yè)數(shù)：30 Pages

TELEDYNE

華特力科