TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE

n THREE POWER IGBT/MOS AND PULSE TRANSFORMER DRIVERS n CURRENT SENSE COMPARATOR n UNCOMMITTED OP-AMP n 0.6 A PER CHANNEL PEAK OUTPUT CURRENT CAPABILITY n LOW OUTPUT IMPEDANCE TYP: 7W AT 200mA n CMOS/LSTTL COMPATIBLE INVERTING INPUT WITH HYSTERESIS n 4V TO 16V SINGLE SUPPLY OPERATION n L

文件：136.66 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE

n THREE POWER IGBT/MOS AND PULSE TRANSFORMER DRIVERS n CURRENT SENSE COMPARATOR n UNCOMMITTED OP-AMP n 0.6 A PER CHANNEL PEAK OUTPUT CURRENT CAPABILITY n LOW OUTPUT IMPEDANCE TYP: 7W AT 200mA n CMOS/LSTTL COMPATIBLE INVERTING INPUT WITH HYSTERESIS n 4V TO 16V SINGLE SUPPLY OPERATION n L

文件：136.66 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE

DESCRIPTION The TD310 is designed to drive one, two or three Power IGBT/MOS and has driving capability for pulse transformer. So it is perfectly suited to interface control IC with Power Switches in low side or half-bridge configuration. ■ THREE POWER IGBT/MOS AND PULSE TRANSFORMER D

文件：138.79 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE

DESCRIPTION The TD310 is designed to drive one, two or three Power IGBT/MOS and has driving capability for pulse transformer. So it is perfectly suited to interface control IC with Power Switches in low side or half-bridge configuration. ■ THREE POWER IGBT/MOS AND PULSE TRANSFORMER D

文件：138.78 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Netz-Thyristor-Modul Phase Control Thyristor Module

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：418.74 Kbytes 頁(yè)數(shù)：13 Pages

EUPEC

TRIPLE IGBT/MOS DRIVER

DESCRIPTION The TD310 is designed to drive one, two or three Power IGBT/MOS and has driving capability for pulse transformer. So it is perfectly suited to interface control IC with Power Switches in low side or half-bridge configuration. ■ THREE POWER IGBT/MOS AND PULSE TRANSFORMER D

文件：82.34 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE

文件：132.26 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE

文件：132.26 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

可控硅/二極管模塊

60 mm PowerBLOCK 相位控制晶閘管/二極管模塊使用絕緣銅基板，采用高可靠性壓接技術(shù)設(shè)計(jì)和組裝。 ? 具有高可靠性的壓接技術(shù)\n? 工業(yè)標(biāo)準(zhǔn)封裝\n? 電絕緣基板\n? 故障時(shí)短路\n? 具有高穩(wěn)健性\n\n優(yōu)勢(shì):\n? 故障保護(hù)\n? 防止電弧失效\n? 易于安裝\n? 由于高過(guò)載能力，可實(shí)現(xiàn)無(wú)熔絲設(shè)計(jì)\n? UL 認(rèn)證;

Infineon

英飛凌

可控硅/二極管模塊

60 mm PowerBLOCK 相位控制晶閘管/二極管模塊使用絕緣銅基板，采用高可靠性壓接技術(shù)設(shè)計(jì)和組裝。 ? 具有高可靠性的壓接技術(shù)\n? 工業(yè)標(biāo)準(zhǔn)封裝\n? 電絕緣基板\n? 故障時(shí)短路\n? 具有高穩(wěn)健性\n\n優(yōu)勢(shì):\n? 故障保護(hù)\n? 防止電弧失效\n? 易于安裝\n? 由于高過(guò)載能力，可實(shí)現(xiàn)無(wú)熔絲設(shè)計(jì)\n? UL 認(rèn)證;

Infineon

英飛凌