H.100/H.110 Interface and Time-Slot Interchangers

Introduction This advisory describes a flaw in some devices that the initial factory test program did not detect. The flaw exists in some version 2 and version 3 T8100A, T8102, and T8105 devices in both the SQFP and BGA package types. An enhanced factory test program has been in place since Janua

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AGERE

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)

High Speed and High Efficiency DC?DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications ● Small footprint due to small and thin package ● High speed switching ● Small gate charge : Qg = 32 nC (typ.) ● Low drain?source ON resistance : RDS (ON) = 20 m? (t

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TOSHIBA

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Silicon P Channel MOS Type (U-MOS III) Notebook PC Applications

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TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 頁數(shù)：73 Pages

TOSHIBA

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