| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SWD2N70 | N-Channel MOSFET uses advanced trench technology 文件：766.05 Kbytes 頁(yè)數(shù)：5 Pages | DOINGTER 杜因特 | DOINGTER | |
N-Channel MOSFET FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 700V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.2Ω(Max)@VGS= 10V APPLICATIONS ·Switch Mode Power Supply(SMPS) ·Power Factor Correction(PFC) ·TV Power & LED lighting Power ·AC to DC Converters 文件：322.83 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
700V N-Channel Power MOSFET General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and 文件：211.76 Kbytes 頁(yè)數(shù)：7 Pages | TSC 臺(tái)灣半導(dǎo)體 | TSC | ||
N-Channel MOSFET uses advanced trench technology 文件：766.08 Kbytes 頁(yè)數(shù)：5 Pages | DOINGTER 杜因特 | DOINGTER | ||
700V N-Channel Power MOSFET 文件：442.28 Kbytes 頁(yè)數(shù)：10 Pages | TSC 臺(tái)灣半導(dǎo)體 | TSC |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SAMWIN/芯派 |
24+ |
N/A |
18995 |
只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
Sage Millmeter |
24+ |
模塊 |
400 |
詢價(jià) | |||
SAMWIN |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
S |
TO252 |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) |
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