N-channel Enhanced mode SOT-23 MOSFET

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SEMIPOWER

芯派科技

低壓MOSFET

Semipower

芯派科技

High Speed Switching Applications

○ High Speed Switching Applications ? ESD protected gate ? Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V)

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TOSHIBA

東芝

High-Speed Switching

Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance : RDS(ON) = 1.05 ? (typ.) (@VGS = 10 V) RDS(ON) = 1.15 ? (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 ? (typ.) (@VGS = 4.5 V) Applications ? High-Speed Switching

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TOSHIBA

東芝

N-Channel Enhancement Mode MOSFET

Features ? Low on on-resistance ? High-speed switching ? Drive circuits can be simple ? Parallel use is easy ? HBM: AEC-Q101-001: H2 (J ESD22- A114-B: ? RoHS compliant with Halogen-free ? Qualified to AEC-Q101 Standards Typical Applications ? N-channel enhancement mode effect transistor

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LUGUANG

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