絲?。?strong>SVS5N70D；Package：TO-252-2L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 頁數(shù)：10 Pages

SILAN

士蘭微

絲印：SVS5N70D；Package：TO-252-2L；5A, 700V DP MOS POWER TRANSISTOR

DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and sup

文件：486.18 Kbytes 頁數(shù)：10 Pages

SILAN

士蘭微

超結(jié)MOS功率管

SVS5N70D/MJ/MN/F N溝道增強型高壓功率MOSFET采用士蘭微電子超結(jié)MOS技術(shù)平臺制造，具有很低的傳導(dǎo)損耗和開關(guān)損耗。使得功率轉(zhuǎn)換器具有高效，高功率密度，提高熱行為。\n\n 此外，SVS5N70D/MJ/MN/F應(yīng)用廣泛。如，適用于硬/軟開關(guān)拓撲。\n\n ? 5A,700V, RDS(on)(typ.)=0.8W@VGS=10V?\n? 創(chuàng)新高壓技術(shù)\n? 低柵極電荷\n? 較強的雪崩能力\n? 較強的dv/dt能力\n? 較高的峰值電流能力;

Silan

士蘭微

Multi-Epi DPMOS

Silan

士蘭微