絲?。?strong>SVD640S；Package：TO-263-2L；18A, 200V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVD640T/D/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide super

文件：368.31 Kbytes 頁(yè)數(shù)：9 Pages

SILAN

士蘭微

絲印：SVD640S；Package：TO-263-2L；18A, 200V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVD640T/D/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide super

文件：368.31 Kbytes 頁(yè)數(shù)：9 Pages

SILAN

士蘭微

18A, 200V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailore

文件：406.39 Kbytes 頁(yè)數(shù)：8 Pages

SILAN

士蘭微

N-Channel MOSFET uses advanced trench technology

文件：1.8167 Mbytes 頁(yè)數(shù)：5 Pages

DOINGTER

杜因特

N-Channel MOSFET

[SEMIPOWER] General Description This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristic

文件：582.65 Kbytes 頁(yè)數(shù)：6 Pages

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