isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=60A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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N-CHANNEL 500V - 0.045ohm - 60A Max247 Zener-Protected MDmesh??ower MOSFET

DESCRIPTION The MDmesh? is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

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N溝道500V - 0.045 Ohm - 60A Max247(TM) 有齊納管保護的MDmesh(TM) 功率MOSFET

The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Companys PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Companys ? INDUSTRYS LOWEST ON-RESISTANCE \n? TIGHT PROCESS CONTROL \n? TYPICAL RDS(on) = 0.045 \n? IMPROVED ESD CAPABILITY \n? HIGH dv/dt AND AVALANCHE CAPABILITIES \n? LOW GATE INPUT RESISTANCE \n? LOW INPUT CAPACITANCE AND GATE CHARGE;

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isc N-Channel MOSFET Transistor

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N-channel 500 V, 0.035 廓, 68 A, MDmesh??II Power MOSFET in a TO-247 package

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